3 . 1 - 1 7 03 r0 100v thru 500v, up to 28a, n-channel, mosfet power t ransistor, repetitive a valanche rated jantx, jantxv power mosfet in t o-254aa p ackage, qualified to mil-prf-19500/596 .144 dia. .050 .040 .260 .249 .685 .665 .800 .790 .545 .535 .550 .510 .045 .035 .550 .530 .150 typ. .150 typ. .005 mechanical outline schematic pin connection pin 1: drain pin 2: source pin 3: gate 123 primary electrical characteristics @ t c = 25 c part number v ds, v olts r ds(on) i d , amps 2n7218 100 .070 28 2n7219 200 .18 18 2n7221 400 .55 10 2N7222 500 .85 8 2n7218, jantx2n7218, jantxv2n7218 2n7221, jantx2n7221, jantxv2n7221 2n7219, jantx2n7219, jantxv2n7219 2N7222, jantx2N7222, jantxv2N7222 features ? repetitive a valanche rating ? isolated and hermetically sealed ? low r ds(on) ? ease of paralleling ? ceramic feedthroughs ? qualified to mil-prf-19500 description this hermetically packaged qpl product features the latest advanced mosfet and packaging technology. i t i s ideally suited for military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
parameter min. typ. max. units test conditions bv dss drain-source 100 v v gs = 0 v , i d =1.0 ma, breakdown voltage r ds(on) static drain-to-source - - -- - - 0.077 v gs = 1 0 v , i d = 20 a 3 on-state resistance - - -- - - 0.125 v gs = 1 0 v , i d = 28 a 3 v gs(th) gate threshold voltage 2.0 - - - 4.0 v v ds = v gs , i d = 250 a i dss zero gate voltage drain - - -- - - 25 a v ds = 80 v, v gs = 0v current - - -- - - 250 v ds = 80 v, v gs = 0v, t j = 125 c i gss gate -to-source leakage forward - - -- - - 100 na v gs = 20 v i gss gate -to-source leakage reverse - - -- - - -100 n a v gs = -20 v q g(on) on-state gate charge - - -- - -59ncv gs = 1 0 v , i d = 28a q gs gate-to-source charge - - -- - -16ncv ds = 50 v q gd gate-to-drain (miller) charge - - -- - - 30.7 n c see note 4 t d(on) turn-on delay time - - -- - -21nsv dd = 5 0 v , i d = 20a, r g =9.1 t r rise time - - -- - - 105 ns see note 4 t d ( o f f ) turn-off delay time - - -- - -64ns t r fall time - - -- - -65ns source-drain diode ratings and characteristics parameter min. typ. max. units test conditions v sd diode forward voltage - - -- - - 1.5 v t j = 25c, i s = 28a 3 , v gs = 0 v t t r r reverse recovery time - - -- - - 400 ns t j = 25c, i f = 28a, d i / d t< 100a/s 3 thermal resistance parameter min. typ. max. units test conditions r thjc junction-to-case - - -- - - 1.0 mounting surface flat, r thcs case-to-sink - - - 0.21 - - - c/w smooth, and greased r thja junction-to-ambient - - -- - - 48 typical socket mount 1. repetitive rating: pulse width limited by maximum junction temperature. 2. @v dd = 25v, starting t j = 25 c , l > 480 h, r g = 25 , peak i l = 28a 3. pulse width < 300 s; duty cycle < 2% 4. see mil-s-19500/596 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 parameter jantxv, jantx, 2n7218 units i d @ v gs = 10v, t c = 25c continuous drain current 28 a i d @ v gs = 10v, t c = 100c continuous drain current 20 a i dm pulsed drain current 1 112 a p d @ t c = 25c maximum power dissipation 125 w linear derating factor 1.0 w/c v gs gate-source voltage 20 v e as single pulse avalanche energy 2 250 4 mj i ar avalanche current 1 28 4 a e ar repetitive avalanche energy 1 12.5 4 mj t j operating junction -55 to 150 c t stg storage temperature range lead temperature 300(.06 from case for 10 sec) c electrical characteristics @ t j = 25c (unless otherwise specified) absolute maximum ra tings ( t c = 25c unless otherwise noted 2n7218, jantx2n7218, jantxv2n7218 2n7221, jantx2n7221, jantxv2n7221 2n7219, jantx2n7219, jantxv2n7219 2N7222, jantx2N7222, jantxv2N7222
parameter min. typ. max. units test conditions bv dss drain-source 200 v v gs = 0 v , i d =1.0 ma, breakdown voltage r ds(on) static drain-to-source - - -- - - 0.18 v gs = 1 0 v , i d = 11 a 3 on-state resistance - - -- - - 0.25 v gs = 1 0 v , i d = 18 a 3 v gs(th) gate threshold voltage 2.0 - - - 4.0 v v ds = v gs , i d = 250 a i dss zero gate voltage drain - - -- - - 25 a v ds = 160 v, v gs = 0v current - - -- - - 250 v ds = 160 v, v gs = 0v, t j = 125 c i gss gate -to-source leakage forward - - -- - - 100 na v gs = 20 v i gss gate -to-source leakage reverse - - -- - - -100 n a v gs = -20 v q g(on) on-state gate charge - - -- - -60ncv gs = 1 0 v , i d = 18a q gs gate-to-source charge - - -- - - 10.6 n c v ds = 100 v q gd gate-to-drain (miller) charge - - -- - - 37.6 n c see note 4 t d(on) turn-on delay time - - -- - -20nsv dd = 100 v, i d = 11a, r g =9.1 t r rise time - - -- - - 105 ns see note 4 t d ( o f f ) turn-off delay time - - -- - -58ns t r fall time - - -- - -67ns source-drain diode ratings and characteristics parameter min. typ. max. units test conditions v sd diode forward voltage - - -- - - 1.5 v t j = 25c, i s = 18a 3 , v gs = 0 v t t r r reverse recovery time - - -- - - 500 ns t j = 25c, i f = 18a, d i / d t< 100a/s 3 thermal resistance parameter min. typ. max. units test conditions r thjc junction-to-case - - -- - - 1.0 mounting surface flat, r thcs case-to-sink - - - 0.21 - - - c/w smooth, and greased r thja junction-to-ambient - - -- - - 48 typical socket mount 1. repetitive rating: pulse width limited by maximum junction temperature. 2. @v dd = 50v, starting t j = 25 c , l > 2 . 1 mh, r g = 25 , peak i l = 18a 3. pulse width < 300 s; duty cycle < 2% 4. see mil-s-19500/596 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 parameter jantxv, jantx, 2n7219 units i d @ v gs = 10v, t c = 25c continuous drain current 18 a i d @ v gs = 10v, t c = 100c continuous drain current 11 a i dm pulsed drain current 1 72 a p d @ t c = 25c maximum power dissipation 125 w linear derating factor 1.0 w/c v gs gate-source voltage 20 v e as single pulse avalanche energy 2 450 4 mj i ar avalanche current 1 18 4 a e ar repetitive avalanche energy 1 12.5 4 mj t j operating junction -55 to 150 c t stg storage temperature range lead temperature 300(.06 from case for 10 sec) c electrical characteristics @ t j = 25c (unless otherwise specified) absolute maximum ra tings ( t c = 25c unless otherwise noted 2n7218, jantx2n7218, jantxv2n7218 2n7221, jantx2n7221, jantxv2n7221 2n7219, jantx2n7219, jantxv2n7219 2N7222, jantx2N7222, jantxv2N7222
parameter min. typ. max. units test conditions bv dss drain-source 400 v v gs = 0 v , i d =1.0 ma, breakdown voltage r ds(on) static drain-to-source - - -- - - 0.55 v gs = 10 v, i d = 6.0 a 3 on-state resistance - - -- - - 0.70 v gs = 1 0 v , i d = 10 a 3 v gs(th) gate threshold voltage 2.0 - - - 4.0 v v ds = v gs , i d = 250 a i dss zero gate voltage drain - - -- - - 25 a v ds = 320 v, v gs = 0v current - - -- - - 250 v ds = 320 v, v gs = 0v, t j = 125 c i gss gate -to-source leakage forward - - -- - - 100 na v gs = 20 v i gss gate -to-source leakage reverse - - -- - - -100 n a v gs = -20 v q g(on) on-state gate charge - - -- - -65ncv gs = 1 0 v , i d = 10a q gs gate-to-source charge - - -- - -10ncv ds = 200 v q gd gate-to-drain (miller) charge - - -- - - 40.5 n c see note 4 t d(on) turn-on delay time - - -- - -25nsv dd = 200 v, i d = 6a, r g = 9.1 t r rise time - - -- - - 92 ns see note 4 t d ( o f f ) turn-off delay time - - -- - -79ns t r fall time - - -- - -58ns source-drain diode ratings and characteristics parameter min. typ. max. units test conditions v sd diode forward voltage - - -- - - 1.5 v t j = 25c, i s = 10a 3 , v gs = 0 v t t r r reverse recovery time - - -- - - 600 ns t j = 25c, i f = 10a, d i / d t< 100a/s 3 thermal resistance parameter min. typ. max. units test conditions r thjc junction-to-case - - -- - - 1.0 mounting surface flat, r thcs case-to-sink - - - 0.21 - - - c/w smooth, and greased r thja junction-to-ambient - - -- - - 48 typical socket mount 1. repetitive rating: pulse width limited by maximum junction temperature. 2. @v dd = 50v, starting t j = 25 c , l > 1 1 . 4 mh, r g = 25 , peak i l = 10a 3. pulse width < 300 s; duty cycle < 2% 4. see mil-s-19500/596 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 parameter jantxv, jantx, 2n7221 units i d @ v gs = 10v, t c = 25c continuous drain current 10 a i d @ v gs = 10v, t c = 100c continuous drain current 6.0 a i dm pulsed drain current 1 40 a p d @ t c = 25c maximum power dissipation 125 w linear derating factor 1.0 w/c v gs gate-source voltage 20 v e as single pulse avalanche energy 2 650 4 mj i ar avalanche current 1 10 4 a e ar repetitive avalanche energy 1 12.5 4 mj t j operating junction -55 to 150 c t stg storage temperature range lead temperature 300 (.06 from case for 10 sec) c electrical characteristics @ t j = 25c (unless otherwise specified) absolute maximum ra tings ( t c = 25c unless otherwise noted 2n7218, jantx2n7218, jantxv2n7218 2n7221, jantx2n7221, jantxv2n7221 2n7219, jantx2n7219, jantxv2n7219 2N7222, jantx2N7222, jantxv2N7222
parameter min. typ. max. units test conditions bv dss drain-source 500 v v gs = 0 v , i d =1.0 ma, breakdown voltage r ds(on) static drain-to-source - - -- - - 0.85 v gs = 1 0 v , i d = 5.0 a 3 on-state resistance - - -- - - 0.95 v gs = 1 0 v , i d = 8.0 a 3 v gs(th) gate threshold voltage 2.0 - - - 4.0 v v ds = v gs , i d = 250 a i dss zero gate voltage drain - - -- - - 25 a v ds = 400 v, v gs = 0v current - - -- - - 250 v ds = 400 v, v gs = 0v, t j = 125 c i gss gate -to-source leakage forward - - -- - - 100 na v gs = 20 v i gss gate -to-source leakage reverse - - -- - - -100 n a v gs = -20 v q g(on) on-state gate charge - - -- - - 68.5 n c v gs = 1 0 v , i d = 8.0a q gs gate-to-source charge - - -- - - 12.5 n c v ds = 250 v q gd gate-to-drain (miller) charge - - -- - - 42.4 n c see note 4 t d(on) turn-on delay time - - -- - -21nsv dd = 250 v, i d = 5.0a, r g = 9.1 t r rise time - - -- - - 73 ns see note 4 t d ( o f f ) turn-off delay time - - -- - -72ns t r fall time - - -- - -51ns source-drain diode ratings and characteristics parameter min. typ. max. units test conditions v sd diode forward voltage - - -- - - 1.5 v t j = 25c, i s = 8.0a 3 , v gs = 0 v t t r r reverse recovery time - - -- - - 700 ns t j = 25c, i f = 8.0a, d i / d t< 100a/s 3 thermal resistance parameter min. typ. max. units test conditions r thjc junction-to-case - - -- - - 1.0 mounting surface flat, r thcs case-to-sink - - - 0.21 - - - c/w smooth, and greased r thja junction-to-ambient - - -- - - 48 typical socket mount 1. repetitive rating: pulse width limited by maximum junction temperature. 2. @v dd = 50v, starting t j = 25 c , l > 20 mh, r g = 25 , peak i l = 8a 3. pulse width < 300 s; duty cycle < 2% 4. see mil-s-19500/596 205 craw ford street, leominster, ma 01453 usa (508) 534-5776 fax (508) 537-4246 parameter jantxv, jantx, 2N7222 units i d @ v gs = 10v, t c = 25c continuous drain current 8.0 a i d @ v gs = 10v, t c = 100c continuous drain current 5.0 a i dm pulsed drain current 1 32 a p d @ t c = 25c maximum power dissipation 125 w linear derating factor 1.0 w/c v gs gate-source voltage 20 v e as single pulse avalanche energy 2 700 4 mj i ar avalanche current 1 8 . 0 4 a e ar repetitive avalanche energy 1 12.5 4 mj t j operating junction -55 to 150 c t stg storage temperature range lead temperature 300(.06 from case for 10 sec) c electrical characteristics @ t j = 25c (unless otherwise specified) absolute maximum ra tings ( t c = 25c unless otherwise noted 2n7218, jantx2n7218, jantxv2n7218 2n7221, jantx2n7221, jantxv2n7221 2n7219, jantx2n7219, jantxv2n7219 2N7222, jantx2N7222, jantxv2N7222
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